? semiconductor components industries, llc, 2014 november, 2014 ? rev. 2 1 publication order number: nss40200uw6/d nss40200uw6t1g, NSV40200UW6T1G 40 v, 2.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc?dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ?40 vdc collector-base voltage v cbo ?40 vdc emitter-base voltage v ebo ?7.0 vdc collector current ? continuous i c ?2.0 adc collector current ? peak i cm ?4.0 a electrostatic discharge esd hbm class 3b mm class c thermal characteristics characteristic symbol max unit total device dissipation, t a = 25 c derate above 25 c p d (note 1) 875 7.0 mw mw/ c thermal resistance, junction?to?ambient r ja (note 1) 143 c/w total device dissipation, t a = 25 c derate above 25 c p d (note 2) 1.5 11.8 w mw/ c thermal resistance, junction?to?ambient r ja (note 2) 85 c/w thermal resistance, junction?to?lead #1 r jl (note 2) 23 c/w total device dissipation (single pulse < 10 sec) p dsingle (notes 2 & 3) 3.0 w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr? 4 @ 100 mm 2 , 1 oz copper traces. 2. fr? 4 @ 500 mm 2 , 1 oz copper traces. 3. thermal response. http://onsemi.com device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. wdfn6 case 506ap nss40200uw6t1g wdfn6 (pb?free) 3000/ tape & reel ?40 volts 2.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 100 m va = specific device code m = date code = pb?free package marking diagram collector 1, 2, 5, 6 3 base 4 emitter pin 1 e c va m 1 2 3 6 5 4 (note: microdot may be in either location) NSV40200UW6T1G wdfn6 (pb?free) 3000/ tape & reel
nss40200uw6t1g, NSV40200UW6T1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 madc, i b = 0) v (br)ceo ?40 ? ? vdc collector ?base breakdown voltage (i c = ?0.1 madc, i e = 0) v (br)cbo ?40 ? ? vdc emitter ?base breakdown voltage (i e = ?0.1 madc, i c = 0) v (br)ebo ?7.0 ? ? vdc collector cutoff current (v cb = ?40 vdc, i e = 0) i cbo ? ? ?0.1 adc emitter cutoff current (v eb = ?7.0 vdc) i ebo ? ? ?0.1 adc on characteristics dc current gain (note 4) (i c = ?10 ma, v ce = ?2.0 v) (i c = ?500 ma, v ce = ?2.0 v) (i c = ?1.0 a, v ce = ?2.0 v) (i c = ?2.0 a, v ce = ?2.0 v) h fe 150 150 150 150 ? ? ? ? ? ? ? ? collector ?emitter saturation voltage (note 4) (i c = ?0.1 a, i b = ?0.010 a) (note 5) (i c = ?1.0 a, i b = ?0.100 a) (i c = ?1.0 a, i b = ?0.010 a) (i c = ?2.0 a, i b = ?0.020 a) v ce(sat) ? ? ? ? ? ?0.100 ? ? ?0.020 ?0.120 ?0.200 ?0.300 v base ?emitter saturation voltage (note 4) (i c = ?1.0 a, i b = ?0.01 a) v be(sat) ? ?0.76 ?0.900 v base ?emitter turn?on voltage (note 4) (i c = ?2.0 a, v ce = ?3.0 v) v be(on) ? ?0.80 ?0.900 v cutoff frequency (i c = ?100 ma, v ce = ?5.0 v, f = 100 mhz) f t 140 ? ? mhz input capacitance (v eb = ?0.5 v, f = 1.0 mhz) cibo ? 500 pf output capacitance (v cb = ?3.0 v, f = 1.0 mhz) cobo ? 100 pf switching characteristics delay (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 70 ns rise (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 150 ns storage (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 525 ns fall (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 155 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulsed condition: pulse width = 300 sec, duty cycle 2%. 5. guaranteed by design but not tested.
nss40200uw6t1g, NSV40200UW6T1G http://onsemi.com 3 typical characteristics figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current 0.001 i c , collector current (a) 0 0.01 0.1 1.0 10 0.05 0.10 0.15 i c /i b = 10 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = 150 c 25 c ?55 c 0.001 i c , collector current (a) 0.20 0.05 0 0.01 0.1 1.0 1 0 0.10 0.15 i c /i b = 100 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = ?55 c 25 c 150 c 0.25 150 c 25 c ?55 c figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current figure 5. base emitter turn?on voltage vs. collector current figure 6. saturation region i c , collector current (a) i c , collector current (a) 0.01 0.001 1.0 0.4 0.1 0.001 i c , collector current (a) 0.6 0.4 0.2 0.1 i b , base current (ma) 0.01 1.0 0.6 0.4 0.2 0 0.01 0.1 1 0 1.0 10 0 0.1 0.6 0.8 0.8 0.2 150 c 25 c ?55 c 0.8 1.0 1.0 10 100 200 300 400 500 600 0.001 0.01 0.1 1 10 150 c (5 v) 25 c (5 v) ?55 c (5 v) 150 c (2 v) 25 c (2 v) ?55 c (2 v) h fe , dc current gain 1.0 0.9 1.1 v be(sat) , base emitter saturation voltage (v) v be(on) , base emitter turn?on voltage (v) 10 v ce , collector?emitter voltage (v) i c = 500 ma 10 ma 100 ma 300 ma v ce = ?1.0 v 0.30 700 0.7 0.5 0.3 0.9 0.5 0.7 0.3 i c /i b = 10
nss40200uw6t1g, NSV40200UW6T1G http://onsemi.com 4 typical characteristics v ce (v dc ) figure 7. input capacitance v eb , emitter base voltage (v) 0 425 375 325 225 175 3.0 1.0 2.0 275 475 5.0 4.0 6.0 0.01 0.1 1 10 1 10 100 c ibo (pf) c ibo , input capacitance (pf) figure 8. output capacitance v cb , collector base voltage (v) 0 140 130 110 30 5.0 120 10 15 25 c obo (pf) c obo , output capacitance (pf) figure 9. pnp safe operating area 20 i c (a) 1.0 ms 10 ms 100 ms 1.0 s thermal limit 0.01 35 30 60 90 80 40 70 100 50 0.1
nss40200uw6t1g, NSV40200UW6T1G http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. center terminal lead is optional. terminal lead is connected to terminal lead # 4. 6. pins 1, 2, 5 and 6 are tied to the flag. c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c wdfn6 2x2 case 506ap issue b dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 b1 0.65 ref d d2 e e2 0.27 ref e 0.15 ref k l pin one reference 0.08 c 0.10 c 7x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 0.05 c 4x j j1 a 0.10 c b1 b 6x 0.05 c l2 note 5 l2 j j1 0.51 0.61 2.00 bsc 1.00 1.20 2.00 bsc 1.10 1.30 0.65 bsc 0.20 0.30 0.20 0.30 bottom view 2.30 6x pitch 1 1.25 0.60 0.35 0.65 0.66 6x 0.43 dimensions: millimeters 1.10 0.35 0.34 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nss40200uw6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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